Package substrate and semiconductor package including the same
US-2024429153-A1 · Dec 26, 2024 · US
US9136253B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136253-B2 |
| Application number | US-201414176431-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 10, 2014 |
| Priority date | Jun 26, 2013 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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According to one embodiment, a semiconductor light emitting device includes: a conductive layer; a first stacked body; a second stacked body; a first light-transmissive electrode; and a first interconnect electrode. The first stacked body includes a first semiconductor layer and a second semiconductor layer. The second semiconductor layer is provided between the first semiconductor layer and the conductive layer. The first light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The second stacked body includes a third semiconductor layer, a fourth semiconductor layer, and a second light emitting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the conductive layer. The second light emitting layer is provided between the third semiconductor layer and the fourth semiconductor layer. The first interconnect electrode is provided between the second semiconductor layer and the third semiconductor layer.
Opening claim text (preview).
What is claimed is: 1. A semiconductor light emitting device, comprising: a conductive layer; a first stacked body including a first semiconductor layer provided to be separated from the conductive layer in a first direction, a second semiconductor layer provided between the first semiconductor layer and the conductive layer, and a first light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the first light emitting layer emitting…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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