Semiconductor light emitting device

US9136253B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9136253-B2
Application numberUS-201414176431-A
CountryUS
Kind codeB2
Filing dateFeb 10, 2014
Priority dateJun 26, 2013
Publication dateSep 15, 2015
Grant dateSep 15, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

According to one embodiment, a semiconductor light emitting device includes: a conductive layer; a first stacked body; a second stacked body; a first light-transmissive electrode; and a first interconnect electrode. The first stacked body includes a first semiconductor layer and a second semiconductor layer. The second semiconductor layer is provided between the first semiconductor layer and the conductive layer. The first light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The second stacked body includes a third semiconductor layer, a fourth semiconductor layer, and a second light emitting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the conductive layer. The second light emitting layer is provided between the third semiconductor layer and the fourth semiconductor layer. The first interconnect electrode is provided between the second semiconductor layer and the third semiconductor layer.

First claim

Opening claim text (preview).

What is claimed is: 1. A semiconductor light emitting device, comprising: a conductive layer; a first stacked body including a first semiconductor layer provided to be separated from the conductive layer in a first direction, a second semiconductor layer provided between the first semiconductor layer and the conductive layer, and a first light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the first light emitting layer emitting…

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What does patent US9136253B2 cover?
According to one embodiment, a semiconductor light emitting device includes: a conductive layer; a first stacked body; a second stacked body; a first light-transmissive electrode; and a first interconnect electrode. The first stacked body includes a first semiconductor layer and a second semiconductor layer. The second semiconductor layer is provided between the first semiconductor layer and th…
Who is the assignee on this patent?
Toshiba Kk
What technology area does this patent fall under?
Primary CPC classification H10W90/00. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).