High electron mobility transistor and method for forming the same
US-12176414-B2 · Dec 24, 2024 · US
US9136245B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136245-B2 |
| Application number | US-201414283602-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 21, 2014 |
| Priority date | Mar 1, 2011 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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An electronic device comprising a bond pad on a substrate and a wire bonded to the bond pad. The device further comprises an intermetallic compound interface located between the bond pad and the wire and a silicon nitride or silicon carbonyl layer covering the intermetallic compound interface.
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing an electronic device, comprising: forming a wire bond, including: providing a bond pad on a substrate; bonding a wire to the bond pad, thereby forming an intermetallic compound interface; and forming a silicon nitride or silicon carbonyl layer that covers an outer surface of the intermetallic compound interface, the silicon carbonyl layer having an elemental formula of Si(CO) n where n=1-4, and the intermetallic compound inte…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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