Semiconductor device with specific lead frame for a power semiconductor module

Patent metadata

Field	Value
Publication number	US-9136209-B2
Application number	US-201113978456-A
Country	US
Kind code	B2
Filing date	Nov 14, 2011
Priority date	Jan 7, 2011
Publication date	Sep 15, 2015
Grant date	Sep 15, 2015

Abstract

A semiconductor device has a heat dissipating base; a patterned insulating substrate attached to the heat dissipating base with a solder therebetween; a semiconductor chip attached to a conductive pattern of the patterned insulating substrate with a solder therebetween; a first conductor attached to the semiconductor chip with a solder therebetween; a resin case attached to the heat dissipating base with an adhesive; and a second conductor attached to the first conductor by laser welding. The second conductor formed by rolling has stripe-shaped rolling traces formed on a surface thereof in a rolling direction and is disposed on the first conductor such that the rolling traces are arranged in a same direction.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a heat dissipating base;
a patterned insulating substrate attached to the heat dissipating base with a solder therebetween;
a plurality of semiconductor chips attached to a conductive pattern of the patterned insulating substrate with a solder therebetween;
a plurality of first conductors attached to the semiconductor chips with a solder therebetween;
a resin case attached to the heat dissipating base with an adhesive; and
a plurality of second conductors attached onto the first conductors,
wherein each of the second conductors has stripe-shaped traces formed on a surface thereof in one direction, and is disposed on each of the first conductors such that the traces on the plurality of second conductors are arranged in the one direction.

2. The semiconductor device according to claim 1 , wherein each of the first conductors is a lower lead frame and each of the second conductors is an upper lead frame.

3. The semiconductor device according to claim 1 , wherein each of the first conductor is a heat spreader or the conductive pattern.

4. The semiconductor device according to claim 2 , wherein the traces are formed at least a portion where the first and second conductors are connected.

Assignees

• Miyasaka Toshiyuki
• Fuji Electric Co Ltd

Inventors

• Miyasaka Toshiyuki

Classifications

• H10W72/07653

  changes in shapes · CPC title

• H10W72/5524

  comprising aluminium [Al] · CPC title

• H10W90/763

  between laterally-adjacent chips · CPC title

• H10W72/07635

  Applying EM radiation, e.g. induction heating or using a laser · CPC title

• H10W40/10

  Arrangements for heating · CPC title