Method for manufacturing semiconductor substrate

Patent metadata

Field	Value
Publication number	US-9136141-B2
Application number	US-201113192498-A
Country	US
Kind code	B2
Filing date	Jul 28, 2011
Priority date	Aug 5, 2010
Publication date	Sep 15, 2015
Grant date	Sep 15, 2015

Abstract

A cap film which can prevent diffusion of hydrogen from the embrittled region and supply hydrogen to a region between the embrittled region and the surface of the semiconductor substrate is formed over the semiconductor substrate, and the semiconductor layer is transferred from the semiconductor substrate to the base substrate. In particular, the amount of hydrogen contained in the cap film formed over the semiconductor substrate is preferably greater than or equal to the irradiation amount of hydrogen ions.

First claim

What is claimed is:

1. A method for manufacturing an SOI substrate, comprising the steps of:
forming an oxide film on a surface of a semiconductor substrate;
forming a silicon nitride film over the oxide film;
forming an embrittled region by irradiating the semiconductor substrate with hydrogen ions from one surface side of the semiconductor substrate through the silicon nitride film;
performing a heat treatment to supply hydrogen from the silicon nitride film toward the em…

Assignees

• Koezuka Junichi
• Semiconductor Energy Lab

Inventors

• Koezuka Junichi

Classifications

• H10W10/181

  Electricity · mapped topic

• H10P90/1916

  Electricity · mapped topic

• H10P95/90 Primary

  Electricity · mapped topic

• H10D86/01

  Electricity · mapped topic

• H01L21/76254

  Electricity · mapped topic