Silicon light trap devices
US-2015001665-A1 · Jan 1, 2015 · US
Method and structure for creating cavities with extreme aspect ratios
US9136136B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136136-B2 |
| Application number | US-201314031694-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 19, 2013 |
| Priority date | Sep 19, 2013 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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Abstract
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Embodiments relate to structures, systems and methods for more efficiently and effectively etching sacrificial and other layers in substrates and other structures. In embodiments, a substrate in which a sacrificial layer is to be removed to, e.g., form a cavity comprises an etch dispersion system comprising a trench, channel or other structure in which etch gas or another suitable gas, fluid or substance can flow to penetrate the substrate and remove the sacrificial layer. The trench, channel or other structure can be implemented along with openings or other apertures formed in the substrate, such as proximate one or more edges of the substrate, to even more quickly disperse etch gas or some other substance within the substrate.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of removing a sacrificial layer in a substrate, comprising: applying an etch material to the substrate, wherein the substrate comprises at least one pre-existing aperture and at least one pre-existing channel; penetrating the substrate with the etch material via the at least one pre-existing aperture formed in the substrate; removing a portion of the sacrificial layer by the etch material to reach the at least one pre-existing channel formed in…
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Electricity · mapped topic
Electricity · mapped topic
Physics · mapped topic
Physics · mapped topic
Operations & Transport · mapped topic
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Frequently asked questions
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- What does patent US9136136B2 cover?
- Embodiments relate to structures, systems and methods for more efficiently and effectively etching sacrificial and other layers in substrates and other structures. In embodiments, a substrate in which a sacrificial layer is to be removed to, e.g., form a cavity comprises an etch dispersion system comprising a trench, channel or other structure in which etch gas or another suitable gas, fluid or…
- Who is the assignee on this patent?
- Infineon Technologies Dresden Gmbh
- What technology area does this patent fall under?
- Primary CPC classification B81C1/00619. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).