Polyhedral oligomeric silsesquioxane nanocrystal stabilization ligands

US9133394B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9133394-B2
Application numberUS-201414208079-A
CountryUS
Kind codeB2
Filing dateMar 13, 2014
Priority dateMar 14, 2013
Publication dateSep 15, 2015
Grant dateSep 15, 2015

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Abstract

Official abstract text for this publication.

Quantum-dot binding ligands with silsesquioxane moieties are provided. The quantum-dot binding ligands include a multiplicity of amine or carboxy binding ligands in combination with silsesquioxane moieties providing improved stability for the ligated quantum dots. The ligands and coated nanostructures of the present invention are useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures.

First claim

Opening claim text (preview).

What is claimed is: 1. A quantum dot binding-ligand having a structure according to Formula I wherein: A is a polyhedral oligomeric silsesquioxane (POSS) moiety comprising 6 to 12 silicon atoms; each group —O—Si(R 1 ) 2 -L-(R 2 ) q is bound to a silicon atom in the POSS moiety; each R 1 is independently selected from the group consisting of H and C 1-6 alkyl; each L is independently selected from the group consisting of C 3-8 alkylene, C 3-8 heteroalkylene, and C 3-8 alkylene-(C(O)NH—C 2-8 alkylene) q ; each R 2 is independently selected from the group consisting of C(O)OH and NR 2a R 2b , wherein R 2a and R 2b are each independently selected from the group consisting of H and C 1-6 alkyl; each R 3 is independently selected from the group consisting of C 8-20 alkyl, C 8-20 heteroalkyl, C 8-20 alkenyl, C 8-20 alkynyl, cycloalkyl, and aryl; the subscript m is an integer from 1 to 20; the subscript n is an integer from 1 to 20; and each subscript q is independently an integer from 2 to 10. 2. The quantum dot binding-ligand according to claim 1 , wherein each R 1 is independently C 1-3 alkyl. 3. The quantum dot binding-ligand according to claim 1 , wherein each R 1 is methyl. 4. The quantum dot binding-ligand according to claim 1 , wherein each -L-(R 2 ) q group is independently selected from the group consisting of C 3-8 alkylene-(R 2 ) 2 , and C 3-8 alkylene-(C(O)NH—C 2-8 alkylene-(R 2 ) 2 . 5. The quantum dot binding-ligand according to claim 1 , wherein each -L-(R 2 ) q group is independently selected from the group consisting of: 6. The quantum dot binding-ligand according to claim 1 , wherein each R 2 is C(O)OH. 7. The quantum dot binding-ligand according to claim 6 , wherein each L is C 3-8 alkylene. 8. The quantum dot binding-ligand according to claim 6 , wherein each -L-(R 2 ) q group is: 9. The quantum dot binding-ligand according to claim 1 , wherein each R 2 is NH 2 . 10. The quantum dot binding-ligand according to claim 9 , wherein each L is independently C 3-8 alkylene-(C(O)NH—C 2-8 alkylene) q ; and each subscript q is 2. 11. The quantum dot binding-ligand according to claim 10 , wherein each -L-(R 2 ) q group is: 12. The quantum dot binding-ligand according to claim 1 , wherein each R 3 is independently selected from the group consisting of octyl, isooctyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, nonadecyl, icosyl, cyclopentyl, cyclohexyl, cyclooctyl, norbornyl, adamantyl, phenyl, naphthyl, and anthracenyl. 13. The quantum dot binding-ligand according to claim 1 , wherein R 3 is selected from the group consisting of cyclohexyl, phenyl, and isooctyl. 14. The quantum dot binding-ligand according to claim 1 , wherein the subscript m is an integer from 5 to 10. 15. The quantum dot binding-ligand according to claim 1 , wherein the subscript m is 7. 16. The quantum dot binding-ligand according to claim 1 , wherein the subscript n is an integer from 1 to 6. 17. The quantum dot binding-ligand according to claim 1 , wherein the subscript n is 3. 18. The quantum dot binding-ligand according to claim 1 , wherein the POSS moiety has the following structure: 19. The quantum dot binding-ligand according to claim 18 , wherein: each R 1 is methyl; each -L-(R 2 ) q group is selected from the group consisting of: each R 3 is selected from the group consisting of cyclohexyl, phenyl, and isooctyl; the subscript m is 7; and the subscript n is 3. 20. A composition comprising: a quantum dot binding-ligand of claim 1 ; and a first population of light emitting quantum dots (QDs).

Assignees

Inventors

Classifications

  • C09K11/883Primary

    with zinc or cadmium · CPC title

  • non-luminescent particle coatings or suspension media · CPC title

  • Polysiloxanes modified by chemical after-treatment · CPC title

  • containing silicon bound to oxygen-containing groups · CPC title

  • nitrogen-containing groups · CPC title

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What does patent US9133394B2 cover?
Quantum-dot binding ligands with silsesquioxane moieties are provided. The quantum-dot binding ligands include a multiplicity of amine or carboxy binding ligands in combination with silsesquioxane moieties providing improved stability for the ligated quantum dots. The ligands and coated nanostructures of the present invention are useful for close packed nanostructure compositions, which can hav…
Who is the assignee on this patent?
Nanosys Inc
What technology area does this patent fall under?
Primary CPC classification C09K11/883. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).