MEMS microphone and method for manufacture

Patent metadata

Field	Value
Publication number	US-9133016-B2
Application number	US-201414171989-A
Country	US
Kind code	B2
Filing date	Feb 4, 2014
Priority date	Feb 16, 2010
Publication date	Sep 15, 2015
Grant date	Sep 15, 2015

Abstract

An improved method for manufacturing an MEMS microphone with a double fixed electrode is specified which results in a microphone which likewise has improved properties.

First claim

The invention claimed is:

1. A method for manufacturing a microphone of MEMS design comprising the following steps of:
a) on a substrate the following are deposited one above another: a first insulation layer and one or a plurality of partial layers for a bottom fixed electrode,
b) the partial layers of the bottom fixed electrode are patterned by lithographic etching,
c) the following are deposited above the bottom fixed electrode: a second insulation layer and one or a plurality of partial layers for a membrane,
d) the partial layers of the membrane are patterned by lithographic etching,
e) the following are deposited above the membrane: a third insulation layer and at least one partial layer for a top fixed electrode,
f) the at least one partial layer of the top fixed electrode is patterned by lithographic etching,
g) a fourth insulation layer is produced above the top fixed electrode,
h) contact holes to electrically conductive partial layers of bottom fixed electrode, membrane and top fixed electrode are etched and contacts are deposited therein,
i) a continuous perforation is etched through the substrate below an active region of the membrane,
j) the insulation layers are removed in the active region by isotropic wet etching,
wherein in method step j) the membrane is etched free within incisions only to an extent such that in an outer edge region of the membrane the complete original layer composite assembly is maintained and the outer edge region of the membrane thus remains fixed in the layer composite assembly.

2. The method according to claim 1 ,
wherein in method step c) the surface of the second insulation layer is planarized before the membrane is applied,
wherein first blind holes are produced in the second insulation layer outside the active region,
wherein the partial layers of the membrane are subsequently deposited in edge covering fashion such that even in the blind holes they follow the topography of the second insulation layer and form bulges there,
wherein the third insulation layer is produced in edge covering fashion, such that even in the blind holes it follows the topography of the membrane,
wherein second blind holes are produced in the third insulation layer outside the active region,
wherein the at least one partial layer of the top fixed electrode is deposited in edge covering fashion such that even in the blind holes it follows the topography of the third insulation layer and forms second bulges there.

3. The method according to claim 1 ,
wherein the partial layers and the insulation layers are deposited by LPCVD.

4. The method according to claim 1 ,
wherein in method step a) an SiO 2 layer is deposited as insulation layer and a silicon nitride layer and a polysilicon layer are deposited as the partial layers of the bottom fixed electrode.

5. The method according to claim 1 ,
wherein a method step c) a silicon nitride layer, thereabove a polysilicon layer and thereabove a further silicon nitride layer are deposited as the partial layers of the membrane.

6. The method according to claim 1 ,
wherein anisotropic etching methods are used in the patterning steps, wherein the partial layers are patterned such that all functional layers overlap in the entire active region, wherein the functional layers are required for functioning of the microphone,
wherein continuous holes are produced within the active region in the partial layers of the bottom and of the top fixed electrode during the patterning,
wherein incisions are produced in all partial layers of the membrane in method step d), said incisions enclosing the outer edge region of the membrane with the exception of a connection region, in this case defining the active region of the membrane and electrically isolating it electrically from remaining layer regions of the membrane.

7. The method according to claim 6 ,
wherein the second and third insulation layers are patterned after application such that the respective insulation layer is removed at least in sections within an outer region arranged beyond the incisions, such that all functional layers can be applied there directly one above another.

8. The method according to claim 7 ,
wherein in said outer region the respective insulation layer is removed along a substantially closed strip following the incisions at a distance.

9. The method according to claim 1 ,
wherein the insulation layers are etched in method step j) by means of vapor containing hydrogen fluoride in a VHF method,
wherein at least in a freely oscillating region of the membrane the insulation layers are removed between membrane and the top and bottom fixed electrodes,
wherein the membrane remains fixed in an anchor region with the outer edge region of the membrane between top and bottom fixed electrodes or between second and third insulation layers.

10. The method according to claim 1 ,
wherein in method step j) the membrane is completely etched free of adjacent insulation layers within the area enclosed by incisions including the outer edge region but with the exception of the connection region, such that the membrane becomes laterally moveable in the layer plane.

11. The method according to claim 1 ,
wherein after method step j) the surfaces are treated with a reactive compound containing fluorine, such that a fluorine containing passivation layer forms on reactive surfaces.

12. The method according to claim 1 ,
wherein the layer depositions at least of individual partial layers are conducted such that a corresponding partial layer is also deposited on the rear side of the substrate.

13. The method according to claim 1 ,
wherein reactive ion etching is used in the etching processes in method steps b), d), f) and h).

14. The method according to claim 1 ,
wherein, for the purpose of producing the contacts, firstly a base metallization is deposited over the whole area,
wherein the base metallization is removed outside the contact holes by means of a lithographic etching method,
wherein a conductive layer is deposited above the base metallization by means of an electrolytic or electroless method,
wherein a bondable and solderable covering layer is applied above the further metal layer.

15. A method for manufacturing a microphone of MEMS design comprising the following steps of:
a) on a substrate the following are deposited one above another: a first insulation layer and one or a plurality of partial layers for a bottom fixed electrode,
b) the partial layers of the bottom fixed electrode are patterned by lithographic etching,
c) the following are deposited above the bottom fixed electrode: a second insulation layer and one or a plurality of partial layers for a membrane, wherein the surface of the second insulation layer is planarized before the membrane is applied,
d) the partial layers of the membrane are patterned by lithographic etching,
e) the following are deposited above the membrane: a third insulation layer and at least one partial layer for a top fixed electrode,
f) the at least one partial layer of the top fixed electrode is patterned by lithographic etching,
g) a fourth insulation layer is produced above the top fixed electrode,
h) contact holes to electrically conductive partial layers of bottom fixed electrode, membrane and top fixed electrode are etched and contacts are deposited therein,
i) a continuous perforation is etched through the substrate below an active region of the membrane, and
j) the insulation layers are removed in the active region by isotropic wet etching,
wherein first blind holes are produced in the second insulation

Assignees

• Rombach Pirmin Hermann Otto
• Epcos Ag

Inventors

• Rombach Pirmin Hermann Otto

Classifications

• H04R19/04

  Microphones (H04R19/01 takes precedence) · CPC title

• H04R31/00

  Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor {(manufacture of microstructural arrangements of deformable or non-deformable structures in general B81C1/00182)} · CPC title

• B81C1/00984

  Methods for avoiding stiction when the device is in use not provided for in groups B81C1/00968 - B81C1/00976 · CPC title

• B81B3/0078 Primary

  Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075 · CPC title

• H04R19/005 Primary

  using semiconductor materials · CPC title