Quasi-linear spin torque nano-oscillators
US-2015372687-A1 · Dec 24, 2015 · US
US9130579B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9130579-B2 |
| Application number | US-201414199305-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 6, 2014 |
| Priority date | Mar 27, 2013 |
| Publication date | Sep 8, 2015 |
| Grant date | Sep 8, 2015 |
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An atomic oscillator includes an atomic cell in which an atom is enclosed, a magnetic field generation part to apply a magnetic field to the atomic cell, a reference oscillator which is controlled based on an atomic resonance signal outputted from the atomic cell and generates a reference signal, and a fractional N-PLL which receives the reference signal to generate a signal including a resonance frequency of the atom, in which when a maximum digit of the resonance frequency adjustable by the magnetic field generation part is a boundary digit, the fractional N-PLL can adjust at least a digit one digit higher than the boundary digit.
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What is claimed is: 1. An atomic oscillator comprising: an atomic cell in which an atom is enclosed; a magnetic field generation part to apply a magnetic field to the atomic cell; a reference oscillator that is controlled based on an atomic resonance signal outputted from the atomic cell and generates a reference signal; and a fractional N-PLL that receives the reference signal to generate a signal including a resonance frequency of the atom, wherein when a maximum digit of the resonance frequency adjustable by the magnetic field generation part is a boundary digit, the fractional N-PLL is operable to adjust the resonance frequency at least a digit that is one digit higher than the boundary digit, the fractional N-PLL includes an n-bit decimal setting part to determine a decimal part of a frequency division ratio, and when a bit number of the decimal setting part is n, a phase comparison frequency is f PFD , the resonance frequency is f ΔE , and an adjustable ratio of the magnetic field generation part to the resonance frequeny is R M ,following equation is satisfied f PFD 2 n ≤ f Δ E × R M . 2. The atomic oscillator according to claim 1 , wherein the fractional N-PLL includes a decimal setting part of at least 25 bits. 3. The atomic oscillator according to claim 1 , wherein the fractional N-PLL is operable to adjust at least remaining digits of the resonance frequency which are higher than the boundary digit. 4. A manufacturing method of an atomic oscillator including an atomic cell in which an atom is enclosed, a magnetic field generation part as a coil to apply a magnetic field to the atomic cell, a reference oscillator that is controlled based on an atomic resonance signal outputted from the atomic cell and generates a reference signal, and a fractional N-PLL that includes an n-bit decimal setting part to determine a decimal part of a frequency division ratio and receives the reference signal to generate a signal including a resonance frequency of the atom, the method comprising: determining n of a bit number of the decimal setting part of the fractional N-PLL, wherein when a maximum digit of the resonance frequency adjustable by the magnetic field generation part is a boundary digit, the fractional N-PLL can adjust at least a digit one digit higher than the boundary digit, and when a bit number of the decimal setting part is n, a phase comparison frequency is f PFD , the resonance frequency is f ΔE and an adjustable ratio of the magnetic field generation part to the resonance frequency is R M , following equation is satisfied f PFD 2 n ≤ f Δ E × R M . 5. The manufacturing method of the atomic oscillator according to claim 4 , further comprising: giving an initial value to the n-bit decimal setting part of the fractional N-PLL; and adjusting the value set in the decimal setting part. 6. The manufacturing method of the atomic oscillator according to claim 4 , further comprising adjusting the current of the magnetic field generation part. 7. A manufacturing method of an atomic oscillator including an atomic cell in which an atom is enclosed, a magnetic field generation part as a coil to apply a magnetic field to the atomic cell, a reference oscillator that is controlled based on an atomic resonance signal outputted from the atomic cell and generates a reference signal, and a fractional N-PLL that includes an n-bit decimal setting part to determine a decimal part of a frequency division ratio and receives the reference signal to generate a signal including a resonance frequency of the atom, the method comprising: determining at least one of a number of turns and a current of the magnetic field generation part such that the magnetic field generation part can adjust at least a digit not higher than a boundary digit of the resonance frequency, the boundary digit being a digit one digit lower than a minimum digit of the resonance frequency adjustable by the fractional N-PLL, and when a bit number of the decimal setting part is n, a phase comparison frequency is f PFD , the resonance frequency is f ΔE , and an adjustable ratio of the magnetic field generation part to the resonance frequency is R M , following equation is satisfied f PFD 2 n ≤ f Δ E × R M . 8. The manufacturing method of the atomic oscillator according to claim 7 , further comprising: giving an initial value to the n-bit decimal setting part of the fractional N-PLL; and adjusting the value set in the decimal setting part. 9. The manufacturing method of the atomic oscillator according to claim 7 , further comprising adjusting the current of the magnetic field generation part.
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