Power semiconductor device and power conversion system using the device

US9130476B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9130476-B2
Application numberUS-201113043012-A
CountryUS
Kind codeB2
Filing dateMar 8, 2011
Priority dateApr 6, 2010
Publication dateSep 8, 2015
Grant dateSep 8, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Aspects of the invention are related to a power semiconductor module applied to a multi-level converter circuit with three or more levels of voltage waveform. Aspects of the invention can include a first IGBT to which a diode is reverse parallel connected and a second IGBT having reverse blocking voltage whose emitter is connected to the emitter of the first IGBT are housed in one package, and each of the collector of the first IGBT, the collector of the second IGBT, and the connection points of the emitter of the first IGBT and the emitter of the second IGBT, is an external terminal.

First claim

Opening claim text (preview).

What is claimed is: 1. A power semiconductor module, applied to a multi-level converter circuit with three or more levels of voltage waveform, the converter circuit including a first IGBT and a second IGBT connected in series between a positive side potential and a negative side potential of a DC power supply equipped with a positive side potential, a negative side potential and an intermediate point potential, with a third IGBT and a fourth IGBT, each forming a bidirectional switc…

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What does patent US9130476B2 cover?
Aspects of the invention are related to a power semiconductor module applied to a multi-level converter circuit with three or more levels of voltage waveform. Aspects of the invention can include a first IGBT to which a diode is reverse parallel connected and a second IGBT having reverse blocking voltage whose emitter is connected to the emitter of the first IGBT are housed in one package, and …
Who is the assignee on this patent?
Takizawa Satoki, Fuji Electric Co Ltd
What technology area does this patent fall under?
Primary CPC classification H02M7/487. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 08 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).