Two-dimensional photonic crystal laser

Patent metadata

Field	Value
Publication number	US-9130348-B2
Application number	US-201113192852-A
Country	US
Kind code	B2
Filing date	Jul 28, 2011
Priority date	Jul 30, 2010
Publication date	Sep 8, 2015
Grant date	Sep 8, 2015

Abstract

A two-dimensional photonic crystal laser according to the present invention includes a two-dimensional photonic crystal layer 15 having a base body made of Al α Ga 1-α As (0<α<1) or (Al β Ga 1-β ) γ In 1-γ P (0<=β<1, 0<γ<1) with modified refractive index areas (air holes) 151 periodically arranged therein and an epitaxial growth layer 16 created on the two-dimensional photonic crystal layer 15 by an epitaxial method. Since Al α Ga 1-α As and (Al β Ga 1-β ) γ In 1-γ P are solid even at high temperatures, the air holes 151 will not be deformed in the process of creating the epitaxial growth layer 16 , so that the performance of the two-dimensional photonic crystal layer 15 as a resonator can be maintained at high levels.

First claim

The invention claimed is:

1. A two-dimensional photonic crystal laser, comprising:
a two-dimensional photonic crystal layer having a base-body layer made of Al α Ga 1-α As (O<a<1) or (AI β Ga 1-β ) γ In 1-γ P (0<=β<1, O<γ<1) with modified refractive index areas periodically arranged therein;
an epitaxial growth layer created over the two-dimensional photonic crystal layer by an epitaxial method; and
a regrowth interface layer for epitaxially growing the epitaxial growth layer,…

Assignees

• Noda Susumu
• Sakaguchi Takui
• Nagase Kazuya
• Kunishi Wataru
• Miyai Eiji
• Miura Yoshikatsu
• Ohnishi Dai
• Univ Kyoto
• Rohm Co Ltd

Inventors

• Noda Susumu
• Sakaguchi Takui
• Nagase Kazuya
• Kunishi Wataru
• Miyai Eiji
• Miura Yoshikatsu
• Ohnishi Dai

Classifications

• H01S5/105

  Electricity · mapped topic

• H01S2301/17

  Electricity · mapped topic

• H01S5/1231 Primary

  Electricity · mapped topic

• H01S5/187 Primary

  Electricity · mapped topic

• H01S5/11 Primary

  Electricity · mapped topic