Light emitting diode with three-dimensional nano-structures

Patent metadata

Field	Value
Publication number	US-9130100-B2
Application number	US-201514604371-A
Country	US
Kind code	B2
Filing date	Jan 23, 2015
Priority date	Dec 3, 2011
Publication date	Sep 8, 2015
Grant date	Sep 8, 2015

Abstract

A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode is electrically connected with and covers the first surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located both on the first surface and second surface, and a cross section of each of the three-dimensional nano-structure is M-shaped.

First claim

What is claimed is:

1. A light emitting diode, comprising:
a first semiconductor layer having a first surface and a second surface opposite to the first surface;
an active layer stacked on the second surface;
a second semiconductor layer located on the active layer and having a light emitting surface away from the active layer;
a first electrode electrically connected with and covering the first surface;
a second electrode electrically connected with the second semiconduct…

Assignees

• Univ Tsinghua
• Hon Hai Prec Ind Co Ltd

Inventors

• Zhu zhen-dong
• Li Qun-Qing
• Zhang li-hui
• Chen Mo
• Fan Shou-Shan

Classifications

• B82Y20/00

  Operations & Transport · mapped topic

• H10H20/8312

  Electricity · mapped topic

• H10H20/819

  Electricity · mapped topic

• H10H20/831

  Electricity · mapped topic

• H10H20/821 Primary

  Electricity · mapped topic