Thin film transistor array panel
US-9455333-B2 · Sep 27, 2016 · US
Silicon controlled rectifier for high voltage applications
US9129809B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9129809-B2 |
| Application number | US-201313958901-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 5, 2013 |
| Priority date | Aug 5, 2013 |
| Publication date | Sep 8, 2015 |
| Grant date | Sep 8, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
In a silicon-controlled rectifier, an anode region includes p-type anode well regions which are laterally surrounded by an n-type well region. A length of a p-type anode well region, as measured in a first direction, is greater than a width of the p-type anode well region, as measured in a second direction perpendicular to the first direction. A p-type well region meets the n-type well region at a junction, wherein the junction extends between the p-type well region and n-type well region in the second direction. A cathode region includes a plurality of n-type cathode well regions which are formed in the p-type well region. A length of an n-type cathode well region, as measured in the first direction, is greater than a width of the n-type cathode well region, as measured in the second direction.
First claim
Opening claim text (preview).
What is claimed is: 1. A silicon-controlled rectifier (SCR), comprising: an anode region comprising a plurality of linear or t-shaped p-type anode wells extending in parallel with one another in a first direction and spaced apart from one another in a second direction, wherein a p-type anode well has a length in the first direction and a width in the second direction; wherein the length of the p-type anode well is greater than the width of the p-type anode well; an n-type well r…
Assignees
Inventors
Classifications
Electricity · mapped topic
- H10D1/40Primary
Electricity · mapped topic
Electricity · mapped topic
- H10D89/713Primary
Electricity · mapped topic
- H01L27/0262Primary
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9129809B2 cover?
- In a silicon-controlled rectifier, an anode region includes p-type anode well regions which are laterally surrounded by an n-type well region. A length of a p-type anode well region, as measured in a first direction, is greater than a width of the p-type anode well region, as measured in a second direction perpendicular to the first direction. A p-type well region meets the n-type well region a…
- Who is the assignee on this patent?
- Taiwan Semiconductor Mfg Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D1/40. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 08 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).