Chip form ultracapacitor
US-12165808-B2 · Dec 10, 2024 · US
US9129754B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9129754-B2 |
| Application number | US-201213597652-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 29, 2012 |
| Priority date | Sep 2, 2011 |
| Publication date | Sep 8, 2015 |
| Grant date | Sep 8, 2015 |
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Official abstract text for this publication.
To provide an electrode for a power storage device, which has high reliability and can be miniaturized. To provide a power storage device including the electrode. In the electrode, a stress-relieving layer which relieves internal stress of an active material layer including a whisker is provided over a current collector. By the stress-relieving layer, deformation of the current collector can be suppressed and the productivity of the power storage device can be increased. In addition, the size of the power storage device can be reduced and the reliability thereof can be increased. Graphene may be formed so as to cover the active material layer including a whisker.
Opening claim text (preview).
What is claimed is: 1. An electrode for a power storage device comprising: a current collector; a stress-relieving layer over the current collector; and an active material layer including a whisker over the stress-relieving layer, wherein a direction of internal stress of the stress-relieving layer is different from a direction of internal stress of the active material layer. 2. The electrode for a power storage device, according to claim 1 , wherein…
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