Method of providing an operating voltage in a memory device and a memory controller for the memory device

Patent metadata

Field	Value
Publication number	US-9129697-B2
Application number	US-201414458453-A
Country	US
Kind code	B2
Filing date	Aug 13, 2014
Priority date	Nov 11, 2010
Publication date	Sep 8, 2015
Grant date	Sep 8, 2015

Abstract

A method of providing an operating voltage in a memory device includes applying a read voltage to a selected word line while applying a first pass voltage to at least one unselected word line among word lines adjacent to the selected word line; and while applying a second pass voltage to the remaining unselected word lines (other than the at least one unselected word line to which the first pass voltage is applied). The level of the first pass voltage is higher than the level of the second pass voltage. The level of the first pass voltage may be set based on the level of the read voltage.

First claim

What is claimed is:

1. A method of reading a nonvolatile memory device, comprising:
applying a first read voltage to a selected word line connected to memory cells of the nonvolatile memory device;
applying a first pass voltage to a first unselected word line, the first unselected word line being adjacent to the selected word line while the first read voltage is applied to the selected word line;
applying a second pass voltage to at least one of remaining unselected word line…

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Moo Sung
• Hahn Wook Ghee

Classifications

• G11C16/0483

  Physics · mapped topic

• G11C16/10

  Physics · mapped topic

• G11C11/5642

  Physics · mapped topic

• G11C16/26 Primary

  Physics · mapped topic