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US-2024420305-A1 · Dec 19, 2024 · US
Optical proximity correction modeling method and system
US9129352B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9129352-B2 |
| Application number | US-201313927912-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 26, 2013 |
| Priority date | Aug 30, 2012 |
| Publication date | Sep 8, 2015 |
| Grant date | Sep 8, 2015 |
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Abstract
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An optical proximity correction modeling method for predicting a topography effect due to a pattern stack structure that includes a first material pattern, a second material pattern, and a boundary region between the first material pattern and the second material pattern. The method includes generating a first region filter that corresponds to the first material pattern, a second region filter that corresponds to the second material pattern, and an edge function corresponding to the boundary region; generating a bulk image signal from a layout using the first region filter and the second region filter; generating an edge image signal from the layout using the edge function, a characteristic kernel that represents characteristics of the boundary region, the first region filter, and the second region filter; and generating a final model signal from the bulk image signal and the edge image signal.
First claim
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What is claimed is: 1. A computer-implemented optical proximity correction modeling method for predicting a topography effect due to a pattern stack structure that includes a first material pattern, a second material pattern, and a boundary region between the first material pattern and the second material pattern, said method performed by the computer comprising the steps of: generating a first region filter that corresponds to the first material pattern, a second region filter th…
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Physics · mapped topic
- G06T7/0004Primary
Physics · mapped topic
- G03F7/70441Primary
Physics · mapped topic
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- What does patent US9129352B2 cover?
- An optical proximity correction modeling method for predicting a topography effect due to a pattern stack structure that includes a first material pattern, a second material pattern, and a boundary region between the first material pattern and the second material pattern. The method includes generating a first region filter that corresponds to the first material pattern, a second region filter …
- Who is the assignee on this patent?
- Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification G06T7/0004. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Sep 08 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).