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Insulating gate field effect transistor device and method for providing the same
US9123798B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123798-B2 |
| Application number | US-201213712188-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 12, 2012 |
| Priority date | Dec 12, 2012 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
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Abstract
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An insulating gate field effect transistor (IGFET) device includes a semiconductor body and a gate oxide. The semiconductor body includes a first well region doped with a first type of dopant and a second well region that is doped with an oppositely charged second type of dopant and is located within the first well region. The gate oxide includes an outer section and an interior section having different thickness dimensions. The outer section is disposed over the first well region and the second well region of the semiconductor body. The interior section is disposed over a junction gate field effect transistor region of the semiconductor body. The semiconductor body is configured to form a conductive channel through the second well region and the junction gate field effect transistor region when a gate signal is applied to a gate contact disposed on the gate oxide.
First claim
Opening claim text (preview).
What is claimed is: 1. An insulating gate field effect transistor (IGFET) device comprising: a silicon carbide containing semiconductor body conductively coupled with a source contact and a drain contact, the semiconductor body including a first well region comprising a first volume of the semiconductor body that is disposed at a first side of the semiconductor body and that is doped with a first type of dopant, the semiconductor body including a second well region comprising a se…
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Electricity · mapped topic
Electricity · mapped topic
- H10D64/516Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9123798B2 cover?
- An insulating gate field effect transistor (IGFET) device includes a semiconductor body and a gate oxide. The semiconductor body includes a first well region doped with a first type of dopant and a second well region that is doped with an oppositely charged second type of dopant and is located within the first well region. The gate oxide includes an outer section and an interior section having …
- Who is the assignee on this patent?
- Gen Electric
- What technology area does this patent fall under?
- Primary CPC classification H10D64/516. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 01 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).