Semiconductor device and manufacturing method of the same
US-2015364490-A1 · Dec 17, 2015 · US
Semiconductor device
US9123796B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123796-B2 |
| Application number | US-201414176778-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 10, 2014 |
| Priority date | May 22, 2013 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A semiconductor device includes a gate electrode, source regions and drain regions, a body contact region, and a body bias control electrode. The gate electrode includes a plurality of first portions arranged in parallel with a first distance therebetween, and a second portion connecting the plurality of first portions. The source regions and the drain regions are provided between the plurality of first portions. The body contact region is disposed on the other side of the source regions and the drain regions relative to the second portion. The body bias control electrode is provided on the body contact region in parallel with the second portion at a second distance from the second portion that is greater than the first distance, and is electrically connected to the body contact region.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a gate electrode comprising a plurality of first portions arranged in parallel with a first distance therebetween, and a second portion connecting the plurality of first portions; source and drain regions of a first conductivity type provided between the plurality of first portions and contacting a source electrode and a drain electrode respectively; and a control electrode provided in electrical contact with a body reg…
Assignees
Inventors
Classifications
- H10D30/6744Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D30/60Primary
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9123796B2 cover?
- A semiconductor device includes a gate electrode, source regions and drain regions, a body contact region, and a body bias control electrode. The gate electrode includes a plurality of first portions arranged in parallel with a first distance therebetween, and a second portion connecting the plurality of first portions. The source regions and the drain regions are provided between the plurality…
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H10D30/6744. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 01 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).