Semiconductor device and fabrication method thereof
US-12159906-B2 · Dec 3, 2024 · US
Semiconductor device and method for manufacturing the same
US9123792B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123792-B2 |
| Application number | US-201414226454-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 26, 2014 |
| Priority date | Mar 29, 2013 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A semiconductor device includes: a nitride semiconductor layer; a first silicon nitride film that is formed on the nitride semiconductor layer, has a first opening whose inner wall is a forward tapered shape; a second silicon nitride film that is formed on the first silicon nitride film, and has a second opening whose inner wall is an inverse tapered shape; and a gate electrode formed so as to cover the whole surface of the nitride semiconductor layer exposed on the inside of the first opening; wherein a side wall of the gate electrode separates from the first silicon nitride film and the second silicon nitride film via a cavity.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: a nitride semiconductor layer; a first silicon nitride film that is formed on the nitride semiconductor layer, has a first opening whose inner wall is a forward tapered shape; a second silicon nitride film that is formed on the first silicon nitride film, and has a second opening whose inner wall is an inverse tapered shape; and a gate electrode formed on the nitride semiconductor layer exposed in the first opening;…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9123792B2 cover?
- A semiconductor device includes: a nitride semiconductor layer; a first silicon nitride film that is formed on the nitride semiconductor layer, has a first opening whose inner wall is a forward tapered shape; a second silicon nitride film that is formed on the first silicon nitride film, and has a second opening whose inner wall is an inverse tapered shape; and a gate electrode formed so as to …
- Who is the assignee on this patent?
- Sedi Inc
- What technology area does this patent fall under?
- Primary CPC classification H10D30/4755. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 01 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).