High electron mobility transistor and method for forming the same
US-12176414-B2 · Dec 24, 2024 · US
Semiconductor device and method
US9123791B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123791-B2 |
| Application number | US-201414151193-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 9, 2014 |
| Priority date | Jan 9, 2014 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
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- Title
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Abstract
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A semiconductor device includes a first compound semiconductor material including a first doping concentration and a second compound semiconductor material on the first compound semiconductor material, the second compound semiconductor material including a different material than the first compound semiconductor material. The semiconductor device further includes a control electrode and at least one buried semiconductor material region including a second doping concentration different from the first doping concentration. The at least one buried semiconductor material region is disposed in the first compound semiconductor material in a region other than a region of the first compound semiconductor material being covered by the control electrode.
First claim
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What is claimed is: 1. A semiconductor device, comprising: a first compound semiconductor material comprising a first doping concentration; a second compound semiconductor material on the first compound semiconductor material, the second compound semiconductor material comprising a different material than the first compound semiconductor material; a control electrode; at least one buried semiconductor material region comprising a second doping concentration different from th…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9123791B2 cover?
- A semiconductor device includes a first compound semiconductor material including a first doping concentration and a second compound semiconductor material on the first compound semiconductor material, the second compound semiconductor material including a different material than the first compound semiconductor material. The semiconductor device further includes a control electrode and at leas…
- Who is the assignee on this patent?
- Infineon Technologies Austria
- What technology area does this patent fall under?
- Primary CPC classification H10D30/475. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 01 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).