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Semiconductor device and method for forming the same
US9123781B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123781-B2 |
| Application number | US-78755910-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 26, 2010 |
| Priority date | Aug 23, 2005 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
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Abstract
Official abstract text for this publication.
Semiconductor devices and methods for forming the same in which damages to a low-k dielectric layer therein can be reduced or even prevented are provided. A semiconductor device is provided, comprising a substrate. A dielectric layer with at least one conductive feature therein overlies the substrate. An insulating cap layer overlies the top surface of the low-k dielectric layer adjacent to the conductive feature, wherein the insulating cap layer comprises metal ions.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: a substrate; a low-k dielectric layer with at least one conductive feature therein, overlying the substrate; and an insulating cap layer overlying a top surface of the low-k dielectric layer and a top surface of the at least one conductive feature, wherein the insulating cap layer comprises oxide or oxynitride of tantalum nitride (TaN) and copper. 2. The semiconductor device of claim 1 , wherein…
Assignees
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Classifications
- H10P14/432Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9123781B2 cover?
- Semiconductor devices and methods for forming the same in which damages to a low-k dielectric layer therein can be reduced or even prevented are provided. A semiconductor device is provided, comprising a substrate. A dielectric layer with at least one conductive feature therein overlies the substrate. An insulating cap layer overlies the top surface of the low-k dielectric layer adjacent to the…
- Who is the assignee on this patent?
- Su Hung-Wen, Chou Shih-Wei, Tsai Ming-Hsing, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10P14/432. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 01 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).