Semiconductor devices having a seal ring
US-2024413245-A1 · Dec 12, 2024 · US
FinFET fabrication method
US9123772B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123772-B2 |
| Application number | US-201314044533-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 2, 2013 |
| Priority date | Oct 2, 2013 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
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Abstract
Official abstract text for this publication.
Embodiments of the present invention provide an improved method for fabrication of fin field effect transistors (finFETs). Sacrificial regions are formed on a semiconductor substrate. Spacers are formed adjacent to two sides of the sacrificial regions. Fins are formed based on the spacers. One set of spacers is treated as dummy spacers, and is removed prior to fin formation, leaving the other set of spacers to be used for forming fins on the final semiconductor structure. All the fins on the final semiconductor structure are formed from spacers on one side of the sacrificial material. This reduces variation in width of the fins.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a semiconductor structure, comprising: forming a nitride liner on a semiconductor substrate; forming a plurality of sacrificial material regions on the nitride liner; forming a first set of spacers on a first side of each of the sacrificial material regions and a second set of spacers on a second side of each of the sacrificial material regions; removing the plurality of sacrificial material regions; removing each of the second se…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9123772B2 cover?
- Embodiments of the present invention provide an improved method for fabrication of fin field effect transistors (finFETs). Sacrificial regions are formed on a semiconductor substrate. Spacers are formed adjacent to two sides of the sacrificial regions. Fins are formed based on the spacers. One set of spacers is treated as dummy spacers, and is removed prior to fin formation, leaving the other s…
- Who is the assignee on this patent?
- Globalfoundaries Inc, Globalfoundries Inc
- What technology area does this patent fall under?
- Primary CPC classification H10D84/834. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 01 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).