Charge reservoir IGBT top structure

Patent metadata

Field	Value
Publication number	US-9123770-B2
Application number	US-201314082582-A
Country	US
Kind code	B2
Filing date	Nov 18, 2013
Priority date	Nov 18, 2013
Publication date	Sep 1, 2015
Grant date	Sep 1, 2015

Abstract

An IGBT device includes one or more trench gates disposed over a semiconductor substrate and a floating body region of the first conductivity type disposed between two neighboring trench gates and between a semiconductor substrate and a heavily doped top region of the second conductivity type. A body region of the first conductivity type disposed over the top region has a doping concentration higher than that of the floating body region of the first conductivity type. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

First claim

What is claimed is:

1. An insulating gate bipolar transistor (IGBT) device, comprising:
a substrate including a bottom semiconductor layer of a first conductivity type and an upper semiconductor layer of a second conductivity type;
one or more trench gates each formed in a corresponding trench disposed over the substrate, wherein the trench is provided with a gate insulator on each side of the trench and filled with polysilicon;
a floating body region of the first conductivity…

Assignees

• Alpha & Omega Semiconductor

Inventors

• Hu Jun

Classifications

• H10D64/117

  Electricity · mapped topic

• H10D62/141

  Electricity · mapped topic

• H10D64/513

  Electricity · mapped topic

• H10D62/393

  Electricity · mapped topic

• H10D62/153

  Electricity · mapped topic