Semiconductor device and method
US-2024395867-A1 · Nov 28, 2024 · US
US9123768B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123768-B2 |
| Application number | US-201113288922-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 3, 2011 |
| Priority date | Nov 3, 2010 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
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A three-dimensional polycrystalline semiconductor material provides a major ingredient forming individual crystalline grains having a nominal maximum grain diameter less than or equal to 50 nm, and a minor ingredient forming boundaries between the individual crystalline grains.
Opening claim text (preview).
What is claimed is: 1. A three-dimensional polycrystalline semiconductor material that forms a free electron gas characteristic of quantum wells, comprising a uniform three-dimensional assembly of granular quantum wells, with each granular quantum well further comprising: a semiconducting major ingredient forming individual crystalline grains having the same nominal maximum grain diameter between 20 nm and 50 nm and atomic-scale chemical uniformity throughout the interior of the g…
Electricity · mapped topic
Electricity · mapped topic
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