Methods and systems of operating a double-sided double-base bipolar junction transistor
US-2024396546-A1 · Nov 28, 2024 · US
US9123766B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123766-B2 |
| Application number | US-201314038452-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 26, 2013 |
| Priority date | Sep 22, 2010 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
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In accordance with an embodiment of the present invention a transistor is disclosed. The transistor comprises a collector, a base and an emitter, wherein a first end width of the base is larger than a middle width of the base, wherein a first end width of the collector is larger than a middle width of the collector, or wherein a first end width of the emitter is larger than a middle width of the emitter.
Opening claim text (preview).
What is claimed is: 1. A transistor comprising: a base; an emitter; and a collector, wherein a first end width of the base is larger than a middle width of the base, wherein a first end width of the collector is larger than a middle width of the collector, and wherein a first end width of the emitter is larger than a middle width of the emitter, wherein the base comprises a second end width opposite the first end width and wherein the second end width of the base is larger tha…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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