Method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9123751-B2
Application number	US-201414287494-A
Country	US
Kind code	B2
Filing date	May 27, 2014
Priority date	Oct 24, 2008
Publication date	Sep 1, 2015
Grant date	Sep 1, 2015

Abstract

An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by dry etching in which an etching gas is used, and a second etching step is performed by wet etching in which an etchant is used.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device, comprising:
forming a gate electrode layer over a substrate having an insulating surface;
stacking a gate insulating layer, an oxide semiconductor film, and a conductive film over the gate electrode layer;
forming a first mask layer over the gate insulating layer, the oxide semiconductor film, and the conductive film;
performing a first etching with the first mask layer to etch the oxide semiconductor…

Assignees

• Semiconductor Energy Lab

Inventors

• Ito Shunichi
• Hosoba Miyuki
• Suzawa Hideomi
• Sasagawa Shinya
• Muraoka Taiga

Classifications

• H10D99/00 Primary

  Electricity · mapped topic

• H10D86/423

  Electricity · mapped topic

• H10D30/031

  Electricity · mapped topic

• H10D30/6755 Primary

  Electricity · mapped topic

• H10D30/6757

  Electricity · mapped topic