Transistor, semiconductor device, and semiconductor structure
US-2024379874-A1 · Nov 14, 2024 · US
Transistors including a channel where first and second regions have less oxygen concentration than a remaining region of the channel, methods of manufacturing the transistors, and electronic devices including the transistors
US9123750B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123750-B2 |
| Application number | US-201314016599-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 3, 2013 |
| Priority date | Dec 10, 2012 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
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Abstract
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According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.
First claim
Opening claim text (preview).
What is claimed is: 1. A transistor comprising: a gate electrode, a gate insulating layer, and a channel layer stacked on each other, the channel layer facing the gate electrode, the channel layer including metal oxynitride, the channel layer including first and second regions that are plasma treated regions and have a higher carrier concentration than a carrier concentration in a remaining region of the channel layer, the gate insulating layer between the channel layer and…
Assignees
Inventors
Classifications
Electricity · mapped topic
- H10D99/00Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D30/6755Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9123750B2 cover?
- According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containi…
- Who is the assignee on this patent?
- Samsung Electronics Co Ltd, Samsung Display Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D99/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 01 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).