Vertical type semiconductor devices and methods of manufacturing the same
US-2024172441-A1 · May 23, 2024 · US
US9123748B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123748-B2 |
| Application number | US-201414567810-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 11, 2014 |
| Priority date | May 2, 2012 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
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A semiconductor device includes vertical channel layers, control gates and interlayer insulating layers stacked alternately with each other on the substrate and surrounding the vertical channel layers, floating gates interposed between the vertical channel layers and the control gates and separated from each other by the interlayer insulating layers, and charge blocking layers interposed between the floating gates and the control gates.
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a semiconductor device, the method comprising: forming first sacrificial layers and second sacrificial layers alternately with each other; forming channel holes by etching the first sacrificial layers and the second sacrificial layers; forming a floating gate material layer, a tunnel insulating layer, and a channel layer in the channel holes; forming slits by etching the first sacrificial layers and the second sacrificial laye…
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