Semiconductor device and method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9123742-B2
Application number	US-201313783299-A
Country	US
Kind code	B2
Filing date	Mar 3, 2013
Priority date	Sep 15, 2009
Publication date	Sep 1, 2015
Grant date	Sep 1, 2015

Abstract

A method for manufacturing a semiconductor device includes forming a first gate electrode on a semiconductor substrate in a first transistor region; forming a channel dose region; and forming a first source extension region, wherein the channel dose region is formed by using a first mask as a mask and by ion-implanting a first dopant of the first conductivity type, and the first mask covering a drain side of the first gate electrode and covering a drain region, and the first source extension region is formed by using a second mask and the gate electrode as masks and by ion-implanting a second dopant of a second conductivity type that is a conductivity type opposite to the first conductivity type, the second mask covering the drain side of the first gate electrode and covering the drain region.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device comprising:
forming a first gate electrode on a semiconductor substrate in a first transistor region in which a first transistor of a first conductivity type is to be formed;
forming a channel dose region on the semiconductor substrate, the channel dose region is formed by using a first mask as a mask and by ion-implanting a first dopant of the first conductivity type with acceleration energy that passes th…

Assignees

• Fujitsu Semiconductor Ltd

Inventors

• Shima Masashi

Classifications

• H10P30/222

  Electricity · mapped topic

• H10D64/663

  Electricity · mapped topic

• H10D64/62

  Electricity · mapped topic

• H10D62/83

  Electricity · mapped topic

• H10D30/0212

  Electricity · mapped topic