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US-2018259261-A1 · Sep 13, 2018 · US
High electron mobility transistors and methods of manufacturing the same
US9123740B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123740-B2 |
| Application number | US-201213613677-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 13, 2012 |
| Priority date | Jan 11, 2012 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
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Abstract
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According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer and a channel layer. The channel layer may include an effective channel region and a high resistivity region. The effective channel region may be between the high resistivity region and the channel supply layer. The high resistivity region may be a region into which impurities are ion-implanted. According to example embodiments, a method of forming a HEMT includes forming a device unit, including a channel layer and a channel supply layer, on a first substrate; adhering a second substrate to the device unit; removing the first substrate; and forming a high resistivity region by ion-implanting impurities into at least a portion of the channel layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A high electron mobility transistor (HEMT) comprising: an insulation layer on a substrate; a gate electrode, a source electrode, and a drain electrode, on the insulation layer; a channel supply layer on the insulation layer, the channel supply layer contacting the gate electrode, the source electrode, and the drain electrode; and a channel layer on the channel supply layer, the channel layer including a two-dimensional electron gas (2DEG) induced by th…
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Mechanical Engineering · mapped topic
- E03C1/14Primary
Fixed Constructions · mapped topic
Fixed Constructions · mapped topic
Fixed Constructions · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9123740B2 cover?
- According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer and a channel layer. The channel layer may include an effective channel region and a high resistivity region. The effective channel region may be between the high resistivity region and the channel supply layer. The high resistivity region may be a region into which impurities are ion-im…
- Who is the assignee on this patent?
- Choi Hyuk-Soon, Kim Jong-Seob, Shin Jai-Kwang, and 6 more
- What technology area does this patent fall under?
- Primary CPC classification E03C1/14. Mapped technology areas include Fixed Constructions.
- When was this patent published?
- Publication date Tue Sep 01 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).