Semiconductor die, semiconductor package and substrate dicing method
US-2024421000-A1 · Dec 19, 2024 · US
US9123732B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123732-B2 |
| Application number | US-201213631612-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 28, 2012 |
| Priority date | Sep 28, 2012 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
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Die warpage is controlled for the assembly of thin dies. In one example, a device having a substrate on a back side and components in front side layers is formed. A backside layer is formed over the substrate, the layer resisting warpage of the device when the device is heated. The device is attached to a substrate by heating.
Opening claim text (preview).
What is claimed is: 1. A method comprising: forming a semiconductor device on a semiconductor substrate, the device having a backside and a front side opposite the back side, the front side having components in front side layers; forming a backside layer over the backside of the device by deposition, the backside layer resisting warpage of the device when the device is heated; and attaching the front side of the device to a package substrate by heating after forming the backsi…
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