Semiconductor device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9123720-B2
Application number	US-201313950442-A
Country	US
Kind code	B2
Filing date	Jul 25, 2013
Priority date	Oct 25, 2012
Publication date	Sep 1, 2015
Grant date	Sep 1, 2015

Abstract

A semiconductor device of an embodiment includes: a substrate on which a semiconductor circuit is formed; an interlayer insulating film in which a contact hole is formed on the substrate; a catalyst metal film on a side wall of the contact hole; catalyst metal particles on a bottom of the contact hole; graphene on the catalyst metal film; and carbon nanotubes, which penetrates the contact hole, on the catalyst metal particles.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a substrate on which a semiconductor circuit is formed;
an interlayer insulating film in which a contact hole is formed on the substrate;
a catalyst metal film on a side wall of the contact hole;
catalyst metal particles on a bottom of the contact hole;
graphene on the catalyst metal film;
carbon nanotubes, which penetrates the contact hole, on the catalyst metal particles; and
an embedded film in the contact hole.

2. The device according to claim 1 , wherein an aspect ratio (depth/diameter) of the contact hole is not smaller than 2.

3. The device according to claim 1 , wherein the catalyst metal is metal or alloy containing one or more elements selected from a group including Co, Ni, and Fe.

4. The device according to claim 1 , wherein an average thickness of the catalyst metal film is not less than 5 nm and not more than 20 nm.

5. The device according to claim 1 , wherein a metal film, an alloy film, or a metal nitride film containing one or more elements selected from a group including Ti, Ta, Mn, Mo, V, Ru, and Cu is provided between the catalyst metal film and the interlayer insulating film.

Assignees

• Toshiba Kk

Inventors

• Katagiri Masayuki
• Yamazaki Yuichi
• Sakai Tadashi
• Sakuma Naoshi
• Suzuki Mariko

Classifications

• H10P14/44

  Physical vapour deposition [PVD] · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10W20/0554

  of nanotubes or nanowires · CPC title

• H10W20/4462

  Carbon or carbon-containing materials, e.g. graphene · CPC title

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title