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US-2024371747-A1 · Nov 7, 2024 · US
Metal-oxide-metal capacitor
US9123719B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123719-B2 |
| Application number | US-201213533280-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 26, 2012 |
| Priority date | Jun 26, 2012 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
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- Title
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Abstract
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A semiconductor structure may implement a metal-oxide-metal capacitor. When layer design rules change from one layer to the next, the structure may change the direction of the interleaved plates of the capacitor. For example, when the metallization width or spacing design rules change from layer M3 to layer M4, the structure may run the capacitor traces in different directions (e.g., orthogonal to one another) on M3 as compared to M4. Among the layers that adhere to the same design rules, for example layers M1, M2, and M3, the structure may run the capacitor traces in the same direction in each of the layers M1, M2, and M3. In this way, the capacitor traces overlap to large extent without misalignment on layers that have the same design rules, and the structure avoids misalignment of the capacitor traces when the design rules change.
First claim
Opening claim text (preview).
What is claimed is: 1. A method comprising: fabricating, according to a first value of a design parameter, a first layer comprising first layer metal capacitor traces spaced according to the first value; fabricating, according to a second value of the design parameter, a second layer comprising second layer metal capacitor traces spaced according to the second value and running in a different direction than the first layer metal capacitor traces; and fabricating a first polari…
Assignees
Inventors
Classifications
- H10W20/496Primary
Electricity · mapped topic
Electricity · mapped topic
- H01L23/5223Primary
Electricity · mapped topic
Electricity · mapped topic
Cross-Sectional Technologies · mapped topic
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Frequently asked questions
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- What does patent US9123719B2 cover?
- A semiconductor structure may implement a metal-oxide-metal capacitor. When layer design rules change from one layer to the next, the structure may change the direction of the interleaved plates of the capacitor. For example, when the metallization width or spacing design rules change from layer M3 to layer M4, the structure may run the capacitor traces in different directions (e.g., orthogonal…
- Who is the assignee on this patent?
- Zhang Jiong, King Joseph, Ito Akira, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10W20/496. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 01 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).