Package substrate and semiconductor package including the same
US-2024429153-A1 · Dec 26, 2024 · US
US9123717B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123717-B2 |
| Application number | US-201313954833-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 30, 2013 |
| Priority date | Feb 28, 2013 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
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Official abstract text for this publication.
According to one embodiment, a semiconductor device manufacturing method includes: bonding a first wafer and a second wafer to each other, to form a stack; rubbing a film attached with a fill material in a thin-film shape into a gap located between a bevel of the first wafer and a bevel of the second wafer, to fill the gap with the fill material; and thinning the first wafer.
Opening claim text (preview).
The invention claimed is: 1. A semiconductor device manufacturing method, the method comprising: bonding a first wafer and a second wafer to each other, to form a stack; pressing a first film attached with a fill material in a thin-film shape against a gap located between a bevel of the first wafer and a bevel of the second wafer, to fill the gap with the fill material; removing residual fill material that extends off the gap by use of a second film after filling the gap with…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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