Semiconductor device manufacturing method and manufacturing apparatus

US9123717B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9123717-B2
Application numberUS-201313954833-A
CountryUS
Kind codeB2
Filing dateJul 30, 2013
Priority dateFeb 28, 2013
Publication dateSep 1, 2015
Grant dateSep 1, 2015

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

According to one embodiment, a semiconductor device manufacturing method includes: bonding a first wafer and a second wafer to each other, to form a stack; rubbing a film attached with a fill material in a thin-film shape into a gap located between a bevel of the first wafer and a bevel of the second wafer, to fill the gap with the fill material; and thinning the first wafer.

First claim

Opening claim text (preview).

The invention claimed is: 1. A semiconductor device manufacturing method, the method comprising: bonding a first wafer and a second wafer to each other, to form a stack; pressing a first film attached with a fill material in a thin-film shape against a gap located between a bevel of the first wafer and a bevel of the second wafer, to fill the gap with the fill material; removing residual fill material that extends off the gap by use of a second film after filling the gap with…

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Next steps

Free tools are coming soon. Tell us what you want to track and we'll notify you.

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9123717B2 cover?
According to one embodiment, a semiconductor device manufacturing method includes: bonding a first wafer and a second wafer to each other, to form a stack; rubbing a film attached with a fill material in a thin-film shape into a gap located between a bevel of the first wafer and a bevel of the second wafer, to fill the gap with the fill material; and thinning the first wafer.
Who is the assignee on this patent?
Toshiba Kk
What technology area does this patent fall under?
Primary CPC classification H10W90/00. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 01 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).