Conductive ink for filling vias

Patent metadata

Field	Value
Publication number	US-9123705-B2
Application number	US-201414552212-A
Country	US
Kind code	B2
Filing date	Nov 24, 2014
Priority date	Nov 19, 2012
Publication date	Sep 1, 2015
Grant date	Sep 1, 2015

Abstract

Vias (holes) are formed in a wafer or a dielectric layer. A low viscosity conductive ink, containing microscopic metal particles, is deposited over the top surface of the wafer to cover the vias. An external force is applied to urge the ink into the vias, including an electrical force, a magnetic force, a centrifugal force, a vacuum, or a suction force for outgassing the air in the vias. Any remaining ink on the surface is removed by a squeegee, spinning, an air knife, or removal of an underlying photoresist layer. The ink in the vias is heated to evaporate the liquid and sinter the remaining metal particles to form a conductive path in the vias. The resulting wafer may be bonded to one or more other wafers and singulated to form a 3-D module.

First claim

What is claimed is:

1. An electrical structure comprising:
a hole through a first layer forming part of the electrical structure, the hole being formed between a first surface and an opposite second surface of the first layer;
sintered metal particles within the hole forming a conductive path between the first surface and the second surface, the sintered metal particles remaining from a conductive ink that was deposited over the first surface and heated to sinter the metal particles, the metal particles having diameters including greater than 1 micron, the sintered metal particles forming a conductive via extending between the first surface and the second surface;
a first electrical connection made to a top of the via at the first surface; and
a second electrical connection made to a bottom of the via at the second surface.

2. The structure of claim 1 wherein the first layer comprises a semiconductor.

3. The structure of claim 1 wherein the first layer comprises a semiconductor wafer.

4. The structure of claim 1 wherein the first layer comprises a dielectric.

5. The structure of claim 1 wherein the first layer comprises a single type of material.

6. The structure of claim 1 wherein the first layer comprises at least two layers of dielectric material.

7. The structure of claim 1 wherein the first layer comprises a plurality of layers.

8. The structure of claim 1 wherein the hole comprises a first portion partially through the first layer, and a second portion completing the hole through the first layer, wherein the second portion has a diameter larger than a diameter of the first portion.

9. The structure of claim 1 further comprising electrical components electrically coupled to opposite ends of the conductive path in the via.

10. The structure of claim 1 wherein the hole is less than 10 microns in diameter.

11. The structure of claim 1 wherein a diameter of the hole is such that the conductive ink requires a force greater than gravity to fill the hole.

12. The structure of claim 1 wherein the conductive ink also includes a material with a magnetic permeability to enable the material to be forced into the hole using a magnetic field.

13. The structure of claim 1 wherein at least one of the first electrical connection or the second electrical connection comprises a metal electrode.

14. The structure of claim 1 wherein at least one of the first electrical connection or the second electrical connection comprises a terminal of an electrical component.

15. The structure of claim 1 wherein the hole is a first hole and the conductive via is a first conductive via, the structure further comprising:
a second hole through a second layer between a third surface and an opposite fourth surface of the second layer;
sintered metal particles within the second hole forming a conductive path between the third surface and the fourth surface, the sintered metal particles within the second hole remaining from a conductive ink that was deposited over the third surface and heated to sinter the metal particles, the metal particles having diameters including greater than 1 micron, the sintered metal particles forming a second conductive via extending between the third surface and the fourth surface;
a third electrical connection made to a top of the second conductive via at the third surface; and
a fourth electrical connection made to a bottom of the second conductive via at the fourth surface, wherein the first conductive via is electrically connected to the second conductive via.

Assignees

• Nthdegree Tech Worldwide Inc

Inventors

• Blanchard Richard A
• Ray William J
• Lowenthal Mark D
• Cai Xiaorong
• Kamins Theodore

Classifications

• H10W20/0261

  characterised by the filling method or the material of the conductive fill · CPC title

• H10W90/22

  the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/722

  between stacked chips · CPC title

• H10W72/0198

  batch processes · CPC title