Semiconductor die and package with source down and sensing configuration

Patent metadata

Field	Value
Publication number	US-9123701-B2
Application number	US-201313939894-A
Country	US
Kind code	B2
Filing date	Jul 11, 2013
Priority date	Jul 11, 2013
Publication date	Sep 1, 2015
Grant date	Sep 1, 2015

Abstract

A semiconductor die includes a semiconductor body, a transistor device disposed in the semiconductor body and having a gate, a source and a drain, and a sense device disposed in the semiconductor body and operable to sense a parameter associated with the transistor device. The die further includes a source pad at a first side of the semiconductor body and electrically connected to the source of the transistor device, a drain pad at a second side of the semiconductor body opposing the first side and electrically connected to the drain of the transistor device, and a sense pad at the second side of the semiconductor body and spaced apart from the drain pad. The sense pad is electrically connected to the sense device. A corresponding package and method of manufacturing are also disclosed.

First claim

What is claimed is:

1. A semiconductor die, comprising:
a semiconductor body;
a transistor device disposed in the semiconductor body and having a gate, a source and a drain;
a sense device disposed in the semiconductor body and operable to sense a parameter associated with the transistor device;
a source pad at a first side of the semiconductor body and electrically connected to the source of the transistor device;
a drain pad at a second side of the semiconductor body opp…

Assignees

• Infineon Technologies Austria

Inventors

• Otremba Ralf
• Höglauer Josef
• Nöbauer Gerhard
• Pölzi Martin

Classifications

• H10W90/763

  Electricity · mapped topic

• H10W90/766

  Electricity · mapped topic

• H10W74/00

  Electricity · mapped topic

• H10W90/756

  Electricity · mapped topic

• H10W72/871

  Electricity · mapped topic