Semiconductor device and method for forming the same
US-2024395669-A1 · Nov 28, 2024 · US
US9123700B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123700-B2 |
| Application number | US-201213345422-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 6, 2012 |
| Priority date | Jan 6, 2012 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
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Official abstract text for this publication.
An integrated circuit construction includes a stack of two or more integrated circuit substrates. At least one of the substrates includes through substrate vias (TSVs) individually comprising opposing ends. A conductive bond pad is adjacent one of the ends on one side of the one substrate. A conductive solder mass is adjacent the other end projecting elevationally on the other side of the one substrate. Individual of the solder masses are bonded to a respective bond pad on an immediately adjacent substrate of the stack. Epoxy flux surrounds the individual solder masses. An epoxy material different in composition from the epoxy flux surrounds the epoxy flux on the individual solder masses. Methods of forming integrated circuit constructions are also disclosed.
Opening claim text (preview).
The invention claimed is: 1. An integrated circuit construction, comprising: a stack of two or more integrated circuit substrates, at least one of the substrates comprising through substrate vias (TSVs) individually comprising opposing ends, a conductive bond pad adjacent one of the ends on one side of the one substrate and a conductive solder mass adjacent the other end projecting elevationally on the other side of the one substrate; individual of the solder masses being bonded t…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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