Polishing slurry including zirconia particles and a method of using the polishing slurry

Patent metadata

Field	Value
Publication number	US-9120200-B2
Application number	US-201113338753-A
Country	US
Kind code	B2
Filing date	Dec 28, 2011
Priority date	Dec 28, 2010
Publication date	Sep 1, 2015
Grant date	Sep 1, 2015

Abstract

A polishing slurry can include zirconia particles. The polishing slurry can be used to polish conductive and insulating materials, and is particularly well suited for polishing oxide materials as well as metals. The characteristics of the zirconia particles can affect the polishing of workpieces. By selecting the proper characteristics, the polishing slurry can have a good material removal rate while still providing an acceptable surface finish. The zirconia particles can be used as a replacement for, or in conjunction with, ceria or other abrasive particles. The content of zirconia particles in the polishing slurry may be less than a comparable polishing slurry having silica or alumina particles.

First claim

What is claimed is:

1. A particulate material comprising:
zirconia particles having an average particle size in a range of at least 80 nm to no greater than 200 nm, a density of at least 5.5 g/cm 3 to not greater than 5.8 g/cm 3 , a specific surface area of at least 11 m 2 /g, and an isoelectric point at a pH of at least 6.4 and not greater than 8.2, the isoelectric point being measured in an aqueous solution comprising 0.01 wt % of the zirconia particles based on the total amount of the solution,
wherein the zirconia particles comprise monoclinic ZrO 2 , tetragonal ZrO 2 , cubic ZrO 2 particles, or combinations thereof.

2. The particulate material of claim 1 , wherein the specific surface area is no greater than 25 m 2 /g.

3. The particulate material of claim 1 , having a pore size in a range of approximately 15 nm to 26 nm.

4. The particulate material of claim 1 having an average particle size of 120 nm to 200 nm, a density of 5.5 g/cm 3 to 5.8 g/cm 3 , and a specific surface area in a range of 11 m 2 /g to 25 m 2 /g.

5. The particulate material of claim 1 , where in the zirconia particles are doped with Ce, Y, or Ca and are tetragonal and/or cubic ZrO 2 .

6. The particulate material of claim 5 having an isoelectric point at a pH greater than 7.0 and less than 8.2.

7. A polishing slurry comprising:
zirconia particles having a density of at least 5.5 g/cm 3 to not greater than 5.8 g/cm 3 , an average particle size of at least 80 nm to no greater than 200 nm, a specific surface area of at least 11 m 2 /g, and an isoelectric point at a pH of at least 6.4 and not greater than 8.2, the isoelectric point being measured in an aqueous solution comprising 0.01wt % of the zirconia particles based on the total amount of the solution,
wherein the polishing slurry includes at least approximately 0.2 wt % to no greater than approximately 20 wt % zirconia particles, and wherein the zirconia particles comprise monoclinic ZrO 2 , tetragonal ZrO 2 , cubic ZrO 2 particles, or combinations thereof, and a pH of the polishing slurry is less than 7.

8. The polishing slurry of claim 7 comprising at least 1 wt % monoclinic zirconia,
wherein the zirconia has an average particle size ranging from 127 nm to 200 nm, a specific surface area ranging from 11 m 2 /g to 25 m 2 /g; and a pore size greater than 20 nm.

9. The polishing slurry of claim 7 , further comprising ceria particles.

10. The polishing slurry of claim 7 , wherein the zirconia includes cubic or tetragonal ZrO 2 and the isoelectric point of the zirconia particles is at a pH greater than 7 and less than 8.2.

11. The polishing slurry of claim 7 , wherein the pH of the polishing slurry is at least about 3.

12. The polishing slurry of claim 7 , where in the zirconia particles are doped with Ce, Y, or Ca and are tetragonal and/or cubic ZrO 2 .

13. The polishing slurry of claim 7 , wherein the zirconia particles have a specific surface area of not greater than 25 m 2 /g.

14. A method of polishing a target member comprising:
providing the target member having a workpiece including a feature and a layer overlying the feature; and
polishing the layer using a polishing slurry that comprises zirconia particles, wherein:
the zirconia particles include monoclinic ZrO 2 , tetragonal ZrO 2 , or cubic ZrO 2 particles;
the zirconia particles having an average particle size in a range of at least 80 nm to no greater than 200 nm, a density of at least 5.5 g/cm 3 and not greater than 5.8 g/cm 3 , a specific surface area of at least 11 m 2 /g; and an isoelectric point at a pH of at least 6.4 and not greater than 8.2, the isoelectric point being measured in an aqueous solution comprising 0.01 wt % of the zirconia particles based on the total amount of the solution.

15. The method of claim 14 , wherein the workpiece includes a silicon oxide or a silicon oxynitride.

16. The method of claim 14 , wherein the workpiece comprises a refractory metal-containing material, Cu, Al, or a noble metal.

Assignees

• Haerle Andrew G
• Wang Jun
• Wiss Frederic
• Saint Gobain Ceramics

Inventors

• Haerle Andrew G
• Wang Jun
• Wiss Frederic

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• C09G1/02

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• B24B37/044 Primary

  characterised by the composition of the lapping agent · CPC title

• H01L21/304

  Electricity · mapped topic

• Y10T428/2982

  Particulate matter [e.g., sphere, flake, etc.] · CPC title