Semiconductor light-emitting device and method for fabricating the same

Patent metadata

Field	Value
Publication number	US-9117971-B2
Application number	US-201313862784-A
Country	US
Kind code	B2
Filing date	Apr 15, 2013
Priority date	Oct 15, 2009
Publication date	Aug 25, 2015
Grant date	Aug 25, 2015

Abstract

A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

First claim

What is claimed is:

1. A semiconductor light-emitting device, comprising:
a conductive support member;
a metal layer on the conductive support member;
an electrode layer on the metal layer;
a plurality of compound semiconductor layers on the electrode layer and at least comprising a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer;
a channe…

Assignees

• Lg Innotek Co Ltd

Inventors

• Jeong Hwan Hee
• Lee Sang Youl
• Song June O
• Oh Tchang Hun
• Choi Hee Seok
• Choi Kwang Ki

Classifications

• H10H20/832

  Electricity · mapped topic

• H10H20/825

  Electricity · mapped topic

• H10H20/032

  Electricity · mapped topic

• H10H20/018

  Electricity · mapped topic

• H10H20/8162

  Electricity · mapped topic