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RF LDMOS device and method of forming the same
US9117900B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9117900-B2 |
| Application number | US-201414147484-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 3, 2014 |
| Priority date | Jan 6, 2013 |
| Publication date | Aug 25, 2015 |
| Grant date | Aug 25, 2015 |
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Abstract
Official abstract text for this publication.
An RF LDMOS device is disclosed, including: a substrate having a first conductivity type; a channel doped region having the first conductivity type and a drift region having a second conductivity type, each in an upper portion of the substrate, the channel doped region having a first end in lateral contact with a first end of the drift region; a first well having the first conductivity type in the substrate, the first well having a top portion in contact with both of a bottom of the first end of the channel doped region and a bottom of the first end of the drift region; and a second well having the first conductivity type in the substrate, the second well having a top portion in contact with a bottom of a second end of the drift region. A method of forming such an RF LDMOS device is also disclosed.
First claim
Opening claim text (preview).
What is claimed is: 1. A radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) device comprising: a substrate having a first conductivity type; a channel doped region having the first conductivity type and a drift region having a second conductivity type, each in an upper portion of the substrate, the channel doped region having a first end in lateral contact with a first end of the drift region; a first well having the first conductivity type in the substr…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9117900B2 cover?
- An RF LDMOS device is disclosed, including: a substrate having a first conductivity type; a channel doped region having the first conductivity type and a drift region having a second conductivity type, each in an upper portion of the substrate, the channel doped region having a first end in lateral contact with a first end of the drift region; a first well having the first conductivity type in …
- Who is the assignee on this patent?
- Shanghai Huahong Grace Semiconductor Mfg Corp
- What technology area does this patent fall under?
- Primary CPC classification H10D30/65. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 25 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).