Imaging device
US-2015146060-A1 · May 28, 2015 · US
US9117724B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9117724-B2 |
| Application number | US-201514662413-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 19, 2015 |
| Priority date | Feb 21, 2012 |
| Publication date | Aug 25, 2015 |
| Grant date | Aug 25, 2015 |
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A solid-state image sensing device is configured such that a first voltage is applied to a first conductivity type semiconductor region and a second voltage is applied to source-drain regions having a second conductivity type of the MOS capacitance to apply inverse bias between the semiconductor region and the source-drain regions of the MOS capacitance.
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What is claimed is: 1. A solid-state image sensing device having a semiconductor integrated circuit (IC), comprising the IC, the IC comprising: a P type semiconductor region; a N type photodiode formed in at the semiconductor surface P well region; and a pixel including an N type floating diffusion accumulating electrons generated by the photodiode and an enhancement type metal-oxide semiconductor (MOS) capacitance, the MOS capacitance being additional capacitance of the float…
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