Ion funnel device
US-9824874-B2 · Nov 21, 2017 · US
Planar ion funnel
US9117645B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9117645-B2 |
| Application number | US-201213673622-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 9, 2012 |
| Priority date | Nov 16, 2011 |
| Publication date | Aug 25, 2015 |
| Grant date | Aug 25, 2015 |
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Abstract
Official abstract text for this publication.
A planar ion funnel is disclosed that can be used for ion control. In one application, the planar ion funnel can be used for ion control in a mass spectrometer. The planar ion funnel can be formed on a surface of a substantially planar substrate including an orifice. An electrically conductive structure can be formed on a top surface of the substrate that surrounds the orifice. In operation, a power can be applied to the conductive structure that causes an electric field to be generated that draws ions into and through the orifice. In one embodiment, the orifice can be circular and the conductive structure can be a series of nested rings of increasing diameter surrounding the orifice.
First claim
Opening claim text (preview).
What we claim is: 1. A planar device for ion control in a low pressure environment comprising: a substantially planar substrate; a conductive layer formed on the planar substrate; an orifice passing through the conductive layer and the planar substrate for receiving ions; a structure for generating an electric field, said structure formed in the conductive layer in an area surrounding the orifice such that when a voltage is applied to the structure the electric field is generated t…
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- H01J49/066Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9117645B2 cover?
- A planar ion funnel is disclosed that can be used for ion control. In one application, the planar ion funnel can be used for ion control in a mass spectrometer. The planar ion funnel can be formed on a surface of a substantially planar substrate including an orifice. An electrically conductive structure can be formed on a top surface of the substrate that surrounds the orifice. In operation, a …
- Who is the assignee on this patent?
- Stanford Res Inst Int
- What technology area does this patent fall under?
- Primary CPC classification H01J49/066. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 25 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).