Resistance change memory

Patent metadata

Field	Value
Publication number	US-9117516-B2
Application number	US-201314018790-A
Country	US
Kind code	B2
Filing date	Sep 5, 2013
Priority date	May 10, 2013
Publication date	Aug 25, 2015
Grant date	Aug 25, 2015

Abstract

According to one embodiment, a memory includes memory cells between first conductive lines and second conductive lines. A control circuit is configured to apply a first potential to a first end of a selected first conductive line connected to the selected memory cell among the first conductive lines and first ends of unselected second conductive lines not connected to the selected memory cell among the second conductive lines, apply a second potential larger than the first potential to a first end of a selected second conductive line connected to the selected memory cell among the second conductive lines, apply third potentials smaller than the second potential to first ends of unselected first conductive lines not connected to the selected memory cell among the first conductive lines respectively, and change values of the third potentials based on an address of the selected first conductive line.

First claim

What is claimed is:

1. A resistance change memory comprising:
a plurality of first conductive lines extending in a first direction, and arranged side by side in a second direction which intersects the first direction;
a plurality of second conductive lines extending in the second direction, and arranged side by side in the first direction;
memory cells connected between the first conductive lines and the second conductive lines, at respective intersections of the first conduct…

Assignees

• Toshiba Kk
• Sandisk Corp

Inventors

• Okawa Takamasa
• Ito Fumitoshi
• Minemura Youichi
• Tsukamoto Takayuki
• Kanno Hiroshi

Classifications

• G11C2213/71

  Physics · mapped topic

• G11C13/0023 Primary

  Physics · mapped topic

• G11C13/0007

  Physics · mapped topic

• G11C7/12

  Physics · mapped topic

• G11C13/0002

  Physics · mapped topic