Package substrate and semiconductor package including the same
US-2024429153-A1 · Dec 26, 2024 · US
US9113571B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9113571-B2 |
| Application number | US-201313920375-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 18, 2013 |
| Priority date | Jun 22, 2012 |
| Publication date | Aug 18, 2015 |
| Grant date | Aug 18, 2015 |
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Official abstract text for this publication.
In a bond portion between an electrical conductive land and a connection terminal member, an intermetallic compound producing region in which at least a Cu—Sn-based, an M-Sn-based (M indicates Ni and/or Mn), and a Cu-M-Sn-based intermetallic compound are produced is arranged so as to be present at a connection terminal member side. In this intermetallic compound producing region, when a cross section of the bond portion is equally defined into 10 boxes in a longitudinal direction and a lateral direction to define 100 boxes in total, a ratio of the number of boxes in each of which at least two types of intermetallic compounds having different constituent elements are present to the total number of boxes other than boxes in each of which only a Sn-based metal component is present is about 70% or more.
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing an electronic component module, the method comprising the steps of: preparing a circuit board including a first primary surface and a second primary surface and provided on at least the first primary surface with an electrical conductive land; preparing an electronic component; preparing a columnar connection terminal member including a first end surface and a second end surface, a surface of the connection terminal member bein…
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