Semiconductor device and driver circuit with drain and isolation structure interconnected through a diode circuit, and method of manufacture thereof
US-2015380317-A1 · Dec 31, 2015 · US
High frequency switch
US9112504B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9112504-B2 |
| Application number | US-201214117170-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 23, 2012 |
| Priority date | May 27, 2011 |
| Publication date | Aug 18, 2015 |
| Grant date | Aug 18, 2015 |
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Abstract
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A compact high frequency switch needing no external control signal is obtained. The high frequency switch includes an anti-parallel diode (first anti-parallel diode) having one end and another end coupled with an antenna terminal (first high-frequency-signal input/output terminal) and a transmitting terminal (second high-frequency-signal input/output terminal), respectively, and becoming a conduction state in the input power not less than predetermined high frequency power. When the high frequency switch is an SPDT type, such a switch may include a ¼-wavelength line in the use frequency of the high frequency switch having one end and another end coupled with the antenna terminal and a receiving terminal (third high-frequency-signal input/output terminal), respectively, and an anti-parallel diode (second anti-parallel diode) coupled between the receiving terminal and a ground and becoming a conduction state in the input power not less than predetermined high frequency power.
First claim
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The invention claimed is: 1. A high frequency switch comprising; a first anti-parallel diode which includes two or more anti-parallel diodes connected in series, one end of the first anti-parallel diode being coupled with a first high-frequency-signal input/output terminal, another end of the first anti-parallel diode being coupled with a second high-frequency-signal input/output terminal, and the first anti-parallel diode becoming a conduction state when input power of equal to o…
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- What does patent US9112504B2 cover?
- A compact high frequency switch needing no external control signal is obtained. The high frequency switch includes an anti-parallel diode (first anti-parallel diode) having one end and another end coupled with an antenna terminal (first high-frequency-signal input/output terminal) and a transmitting terminal (second high-frequency-signal input/output terminal), respectively, and becoming a cond…
- Who is the assignee on this patent?
- SAMESHIMA Fuminori, Kohama Masahiko, Morimoto Takuo, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H03K17/74. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 18 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).