Piezoelectric generator and method of manufacturing the same

US9112432B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9112432-B2
Application numberUS-201213714671-A
CountryUS
Kind codeB2
Filing dateDec 14, 2012
Priority dateDec 14, 2012
Publication dateAug 18, 2015
Grant dateAug 18, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Provided are flexible piezoelectric generators and methods of manufacturing the same. The piezoelectric generator includes a first insulation layer disposed on a first electrode, a piezoelectric structure disposed on the first insulation layer, a second insulation layer disposed on the piezoelectric structure, and a second electrode disposed on the second insulation layer.

First claim

Opening claim text (preview).

What is claimed is: 1. A piezoelectric generator comprising: a first electrode; a first insulation layer disposed on the first electrode; a piezoelectric structure disposed on the first insulation layer and including a material generating piezoelectric potential at both ends of the piezoelectric structure by deformation; a second insulation layer disposed on the piezoelectric structure; and a second electrode disposed on the second insulation layer. 2…

Assignees

Inventors

Classifications

  • Cross-Sectional Technologies · mapped topic

  • H02N2/18Primary

    Electricity · mapped topic

  • Cross-Sectional Technologies · mapped topic

  • Cross-Sectional Technologies · mapped topic

  • Operations & Transport · mapped topic

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Frequently asked questions

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What does patent US9112432B2 cover?
Provided are flexible piezoelectric generators and methods of manufacturing the same. The piezoelectric generator includes a first insulation layer disposed on a first electrode, a piezoelectric structure disposed on the first insulation layer, a second insulation layer disposed on the piezoelectric structure, and a second electrode disposed on the second insulation layer.
Who is the assignee on this patent?
Samsung Electronics Co Ltd, Georgia Tech Res Inst
What technology area does this patent fall under?
Primary CPC classification H02N2/18. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 18 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).