CIGS- or CZTS-based film solar cells and method for preparing the same

Patent metadata

Field	Value
Publication number	US-9112075-B2
Application number	US-201314024838-A
Country	US
Kind code	B2
Filing date	Sep 12, 2013
Priority date	Nov 9, 2012
Publication date	Aug 18, 2015
Grant date	Aug 18, 2015

Abstract

Provided is a copper indium gallium selenium (CIGS)- or copper zinc tin sulfur (CZTS)-based solar cell including a back electrode layer and a light-absorbing layer, wherein the light-absorbing layer has a composition of Cu x In y Ga 1-y (S z Se 1-z ) 2 (wherein 0.85≦x<1, 0<y<1, 0<z<1, and each of x, y and z represents a real number) or Cu (2-p) Zn (2-q) Sn q (S r Se (1-r) ) 4 (wherein 1.4≦p<2, 0<q<2, 0<r<2, and each of p, q and r represents a real number). The CIGS- or CZTS-based thin-film solar cell causes no interlayer delamination and has improved durability and photoelectric conversion efficiency. Also provided is a method for fabricating a CIGS- or CZTS-based thin-film solar cell by which conversion of molybdenum back electrode layer to molybdenum diselenide is controlled.

First claim

What is claimed is:

1. A method for fabricating a copper indium gallium selenium (CIGS)-, copper zinc tin sulfur (CZTS)-, copper indium gallium selenium sulfur (CIGSS)- or copper zinc tin sulfur selenium (CZTSS)- based solar cell, comprising:
forming a molybdenum layer on one surface of a substrate;
forming a copper layer on the molybdenum layer;
forming a light-absorbing powder layer of copper indium gallium selenium or copper zinc tin sulfur on the copper layer; and
heat-treating the layers in an atmosphere comprising selenium under conditions wherein the light-absorbing powder layer is converted to a light-absorbing layer, wherein a density and thickness of the copper layer are selected such that the copper layer controls formation of molybdenum diselenide to within a desired limit and such that the copper layer is removed by being absorbed or diffused to the light-absorbing layer as a result of the heat-treating.

2. The method according to claim 1 , wherein the substrate is selected from the group consisting of glass, metal, ceramics, and polymers.

3. The method according to claim 1 , wherein said forming a molybdenum layer comprises conducting at least one process selected from the group consisting of an electron beam coating, sputtering, chemical vapor deposition, and metal-organic chemical vapor deposition process.

4. The method according to claim 1 , wherein said forming a copper layer comprises conducting at least one process selected from the group consisting of a (thermal) vacuum evaporation, electron beam coating, sputtering, chemical vapor deposition (CVD), metal-organic chemical vapor deposition (MOCVD), and electrochemical deposition process.

5. The method according to claim 1 , wherein the light-absorbing powder layer has a composition of Cu x In y Ga 1-y (S z Se 1-z ) 2 (wherein 0<x<1, 0<y<1, 0<z<1, and each of x, y and z represents a real number) or Cu (2-p) Zn (2-q) Sn q (S r Se (1-r) ) 4 (wherein 0<p<2, 0<q<2, 0<r<2, and each of p, q and r represents a real number), and said forming a light-absorbing powder layer comprises conducting at least one process selected from the group consisting of a non-vacuum type process including a doctor blade coating process, a screen printing process, a spin coating process, a spray coating process, and a painting process, under non-vacuum environment.

6. The method according to claim 1 , wherein said heat-treating the layers is conducted with inert or reductive selenium gas at 250-900° C., and the copper has a composition of Cu x In y Ga 1-y (S z Se 1-z ) 2 (wherein 0.85≦x<1, 0<y<1, 0<z<1, and each of x, y and z represents a real number) or Cu (2-p) Zn (2-q) Sn q (S r Se (1-r) ) 4 (wherein 1.4≦p<2, 0<q<2, 0<r<2, and each of p, q and r represents a real number).

7. The method according to claim 1 , which further comprises forming a buffer layer on the light-absorbing layer, and said forming buffer layer is conducted by depositing CdS, ZnS(O,OH), ZnSe, InS(O,OH), In 2 S 3 , ZnIn x Se y , Zn 1-x Mg x O (wherein 0<x<1, 0<y<1, and each of x and y represents a real number) or a combination thereof through at least one process selected from the group consisting of a chemical bath deposition (CBD), electron beam coating, sputtering, and chemical vapor deposition (CVD) process.

8. The method according to claim 7 , which further comprises forming a transparent electrode layer on the buffer layer, and said forming a transparent electrode layer is conducted by depositing ZnO, aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), indium tin oxide (ITO), fluorine-doped tin oxide (FTO) or a combination thereof through an electron beam coating or sputtering process.

9. The method according to claim 1 , wherein the heat treating is conducted at a temperature of 250 to 900° C.

10. The method according to claim 9 , wherein the copper layer is formed to have a thickness corresponding to 1-10% of the thickness of the light-absorbing layer.

Assignees

• Korea Inst Sci & Tech

Inventors

• Park Jong Ku
• Cho So Hye
• Song Bong Geun
• Lee Seung Yong
• Park Bo In
• Park Hyung Ho

Classifications

• H10F77/1694

  the films including Group I-III-VI materials, e.g. CIS or CIGS · CPC title

• H10F77/128 Primary

  comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4 · CPC title

• H10F10/167 Primary

  comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells · CPC title

• H10F10/16

  Photovoltaic cells having only PN heterojunction potential barriers · CPC title

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title