Semiconductor device and fabrication method thereof
US-12159906-B2 · Dec 3, 2024 · US
III-nitride device with back-gate and field plate for improving transconductance
US9112009B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9112009-B2 |
| Application number | US-21116208-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 16, 2008 |
| Priority date | Sep 16, 2008 |
| Publication date | Aug 18, 2015 |
| Grant date | Aug 18, 2015 |
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Abstract
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A III-Nitride device has a back-gate disposed in a trench and under and in close proximity to the 2 DEG layer and in lateral alignment with the main gate of the device. A laterally disposed trench is also disposed in a trench and under and in close proximity to the drift region between the gate and drain electrodes of the device. The back-gate is connected to the main gate and the field plate is connected to the source electrode. The back-gate can consist of a highly conductive silicon substrate.
First claim
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What is claimed is: 1. A III-Nitride device having improved transconductance, said device comprising: a substrate; a first III-nitride layer supported by said substrate; a second III-Nitride layer atop said first III-Nitride layer and creating a 2 DEG conducting layer at the interface of said first and second III-Nitride layers; first and second spaced main electrodes connected to said second III-Nitride layer; a main gate structure connected to said second III-Nitride lay…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9112009B2 cover?
- A III-Nitride device has a back-gate disposed in a trench and under and in close proximity to the 2 DEG layer and in lateral alignment with the main gate of the device. A laterally disposed trench is also disposed in a trench and under and in close proximity to the drift region between the gate and drain electrodes of the device. The back-gate is connected to the main gate and the field plate i…
- Who is the assignee on this patent?
- Charles Alain, Bahramian Hamid Tony, Int Rectifier Corp
- What technology area does this patent fall under?
- Primary CPC classification H10D30/4755. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 18 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).