Method for improving anti-radiation performance of SOI structure

US9111995B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9111995-B2
Application numberUS-201214364984-A
CountryUS
Kind codeB2
Filing dateOct 25, 2012
Priority dateDec 14, 2011
Publication dateAug 18, 2015
Grant dateAug 18, 2015

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A method for improving anti-radiation performance of SOI structure that includes implementing particle implantations of high-energy neutrons, protons and γ-rays to a buried oxide layer of an SOI structure, and then performing annealing process. The high-energy particle implantation introduces displacement damage to the buried oxide layer of the SOI structure.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for improving anti-radiation performance of an SOI structure comprising following steps: a) implementing high-energy particle implantation to a buried oxide layer of the SOI structure and then performing annealing process; wherein the high-energy particle implantation introduces displacement damage to the buried oxide layer of the SOI structure. 2. The method of claim 1 , wherein the step of implementing high-energy particle…

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Next steps

Free tools are coming soon. Tell us what you want to track and we'll notify you.

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9111995B2 cover?
A method for improving anti-radiation performance of SOI structure that includes implementing particle implantations of high-energy neutrons, protons and γ-rays to a buried oxide layer of an SOI structure, and then performing annealing process. The high-energy particle implantation introduces displacement damage to the buried oxide layer of the SOI structure.
Who is the assignee on this patent?
Inst Of Microelectronics Cas
What technology area does this patent fall under?
Primary CPC classification H10P90/1908. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 18 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).