FinFET with dielectric isolation by silicon-on-nothing and method of fabrication
US-9219068-B2 · Dec 22, 2015 · US
US9111995B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9111995-B2 |
| Application number | US-201214364984-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 25, 2012 |
| Priority date | Dec 14, 2011 |
| Publication date | Aug 18, 2015 |
| Grant date | Aug 18, 2015 |
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A method for improving anti-radiation performance of SOI structure that includes implementing particle implantations of high-energy neutrons, protons and γ-rays to a buried oxide layer of an SOI structure, and then performing annealing process. The high-energy particle implantation introduces displacement damage to the buried oxide layer of the SOI structure.
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What is claimed is: 1. A method for improving anti-radiation performance of an SOI structure comprising following steps: a) implementing high-energy particle implantation to a buried oxide layer of the SOI structure and then performing annealing process; wherein the high-energy particle implantation introduces displacement damage to the buried oxide layer of the SOI structure. 2. The method of claim 1 , wherein the step of implementing high-energy particle…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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