Semiconductor structure with flush shallow trench isolation and gate oxide and method of manufacturing the same
US-2024395883-A1 · Nov 28, 2024 · US
Semiconductor device and method of fabricating the same
US9111994B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9111994-B2 |
| Application number | US-201113193679-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 29, 2011 |
| Priority date | Nov 1, 2010 |
| Publication date | Aug 18, 2015 |
| Grant date | Aug 18, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a multi-depth trench is formed, the multi-depth trench including a shallow trench and a deep trench arranged below the shallow trench, a first dielectric material formed in partial area of the multi-depth trench, the first dielectric material including a slope in the shallow trench that extends upward from a corner where a bottom plane of the shallow trench and a sidewall of the deep trench meets, the slope being inclined with respect to the bottom plane of the shallow trench, and a second dielectric material formed in areas of the multi-depth trench in which the first dielectric material is absent.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of fabricating a semiconductor device, the method comprising: forming a multi-depth trench in a semiconductor substrate, the forming of the multi-depth trench comprising: forming a shallow trench; and forming a deep trench arranged below the shallow trench; depositing a first dielectric material into a partial area of the multi-depth trench comprising the shallow trench and the deep trench, the deposited first dielectric material forming a sl…
Assignees
Inventors
Classifications
- H10P50/691Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D62/115Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9111994B2 cover?
- A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a multi-depth trench is formed, the multi-depth trench including a shallow trench and a deep trench arranged below the shallow trench, a first dielectric material formed in partial area of the multi-depth trench, the first dielectric material including a…
- Who is the assignee on this patent?
- Won Yong-Sik, Lee Sang-Uk, Magnachip Semiconductor Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P50/691. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 18 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).