Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic base

Patent metadata

Field	Value
Publication number	US-9111986-B2
Application number	US-201414151225-A
Country	US
Kind code	B2
Filing date	Jan 9, 2014
Priority date	Jan 9, 2014
Publication date	Aug 18, 2015
Grant date	Aug 18, 2015

Abstract

Fabrication methods, device structures, and design structures for a bipolar junction transistor. An intrinsic base layer is formed on a semiconductor substrate, an etch stop layer is formed on the intrinsic base layer, and an extrinsic base layer is formed on the etch stop layer. A trench is formed that penetrates through the extrinsic base layer to the etch stop layer. The trench is formed by etching the extrinsic base layer selective to the etch stop layer. The first trench is extended through the etch stop layer to the intrinsic base layer by etching the etch stop layer selective to the intrinsic base layer. After the trench is extended through the etch stop layer, an emitter is formed using the trench.

First claim

What is claimed is:

1. A method of forming a device structure for a bipolar junction transistor, the method comprising:
forming an intrinsic base layer on a semiconductor substrate;
forming an etch stop layer on the intrinsic base layer;
forming an extrinsic base layer on the etch stop layer;
forming a first trench penetrating through the extrinsic base layer to the etch stop layer by etching the extrinsic base layer selective to the etch stop layer;
forming a second trenc…

Assignees

• IBM

Inventors

• Camillo-Castillo Renata
• Cheng Peng
• Jain Vibhor
• Liu Qizhi
• Pekarik John J

Classifications

• H10D62/832

  Electricity · mapped topic

• H10D62/822

  Electricity · mapped topic

• H10D62/138

  Electricity · mapped topic

• H10D62/137

  Electricity · mapped topic

• H10D62/115

  Electricity · mapped topic